Quantum Dot (QD) Delivery Method

ABSTRACT

Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.14/196,123, filed on Mar. 4, 2014, which claims the benefit of U.S.Provisional Application No. 61/773,084, filed Mar. 5, 2013, the entirecontents of which are hereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present invention are in the field of quantum dotsand, in particular, quantum dot delivery methods.

BACKGROUND

Quantum dots having a high photoluminescence quantum yield (PLQY) may beapplicable as down-converting materials in down-convertingnano-composites used in solid state lighting applications.Down-converting materials are used to improve the performance,efficiency and color choice in lighting applications, particularly lightemitting diodes (LEDs). In such applications, quantum dots absorb lightof a particular first (available or selected) wavelength, usually blue,and then emit light at a second wavelength, usually red or green.

SUMMARY

Embodiments of the present invention include quantum dot deliverymethods.

In an embodiment, a method of delivering or storing a plurality ofnano-particles involves providing a plurality of nano-particles. Themethod also involves forming a dispersion of the plurality ofnano-particles in a medium for delivery or storage, wherein the mediumis free of organic solvent.

In another embodiment, a composition for delivery or storage ofnano-particles includes a vinyl-containing poly(phenylmethylsiloxane)polymer. A plurality of nano-particles is dispersed in thevinyl-containing poly(phenylmethylsiloxane) polymer.

In another embodiment, a method of delivering or storing a plurality ofnano-particles involves providing a plurality of nano-particles in anorganic solvent. The method also involves drying the plurality ofnano-particles for delivery or storage, the drying removing entirely allof the organic solvent.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a graph showing one-way analysis of quantum dot samples overthe course of twelve days for quantum dots delivered as avinyl-containing poly(phenylmethylsiloxane) polymer solution, inaccordance with an embodiment of the present invention.

FIG. 1B is a graph showing one-way analysis of quantum dot samplesdispersed in two different media: a solvent (toluene) and avinyl-containing poly(phenylmethylsiloxane) polymer (PMV-9925), inaccordance with an embodiment of the present invention.

FIG. 2A is a plot of PLQY at 100 degrees Celsius versus room temperatureshowing luminescent nano-composite performance of films includingquantum dots, in accordance with an embodiment of the present invention.

FIG. 2B is a plot of PLQY at 100 degrees Celsius versus room temperatureshowing luminescent nano-composite performance of films includingquantum dots, in accordance with an embodiment of the present invention.

FIG. 3 is a plot of spectral radiant power (%) as a function ofwavelength (nm) comparing performance of freeze-dried quantum dotheterostructures (QDH) along with solution dispersion QDH in thefabrication of a warm white phosphor film, in accordance with anembodiment of the present invention.

FIG. 4 is a CIE 1931 plot of freeze-dried warm white film (square)compared to solution dispersion warm white film (circle), in accordancewith an embodiment of the present invention.

FIG. 5 illustrates a schematic of a cross-sectional view of a quantumdot suitable for delivery by approaches described herein, in accordancewith an embodiment of the present invention.

FIG. 6 illustrates a cross-sectional view of a semiconductor structurehaving a nano-crystalline core and nano-crystalline shell pairing withone compositional transition layer, in accordance with an embodiment ofthe present invention.

FIG. 7 illustrates a cross-sectional view of a semiconductor structurehaving a nano-crystalline core/nano-crystalline shell/nano-crystallineouter shell combination with two compositional transition layers, inaccordance with an embodiment of the present invention.

FIG. 8 illustrates a cross-sectional view of a semiconductor structurehaving a nano-crystalline core/nano-crystalline shell/nano-crystallineouter shell combination with one compositional transition layer, inaccordance with an embodiment of the present invention.

FIG. 9 illustrates operations in a reverse micelle approach to coating asemiconductor structure, in accordance with an embodiment of the presentinvention.

FIG. 10 illustrates a lighting device that includes a blue LED with alayer having a composition with a dispersion of quantum dots therein, inaccordance with an embodiment of the present invention.

FIG. 11 illustrates a cross-sectional view of a lighting device with alayer having a composition with a dispersion of quantum dots therein, inaccordance with an embodiment of the present invention.

FIG. 12 illustrates a cross-sectional view of a lighting device with alayer having a composition with a dispersion of quantum dots therein, inaccordance with another embodiment of the present invention.

FIG. 13 illustrates a cross-sectional view of a lighting device with alayer having a composition with a dispersion of quantum dots therein, inaccordance with another embodiment of the present invention.

FIG. 14 illustrates a cross-sectional view of a lighting device with alayer having a composition with a dispersion of quantum dots therein, inaccordance with another embodiment of the present invention.

FIGS. 15A-15C illustrate cross-sectional views of various configurationsfor lighting devices with a layer having a composition with a dispersionof quantum dots therein, in accordance with another embodiment of thepresent invention.

DETAILED DESCRIPTION

Quantum dot delivery methods are described herein. In the followingdescription, numerous specific details are set forth, such as specificquantum dot geometries and efficiencies, in order to provide a thoroughunderstanding of embodiments of the present invention. It will beapparent to one skilled in the art that embodiments of the presentinvention may be practiced without these specific details. In otherinstances, well-known related apparatuses, such as the host of varietiesof applicable light emitting diodes (LEDs), are not described in detailin order to not unnecessarily obscure embodiments of the presentinvention. Furthermore, it is to be understood that the variousembodiments shown in the figures are illustrative representations andare not necessarily drawn to scale.

One or more embodiments described herein are directed to approaches fordelivering stable quantum dot materials for processing into matrixmaterials without difficulty and without changing the properties of thequantum dots themselves. Several different approaches for quantum dot ornano-particle delivery are described herein.

To provide context, quantum dots are synthesized colloidally and, afterpurifying with excess reagents, are typically stored in an organicsolvent such as toluene. Often, when quantum dots are manufactured forcommercial purposes they are delivered dissolved in the organic solvent.However, delivering quantum dots in a solvent to end-users who wish tofurther process the quantum dots into a matrix may be problematic forseveral reasons. First, quantum dots often require the presence ofligands on the quantum dot surfaces for maintaining the opticalproperties and structural integrity of the quantum dots. However, theligands present on the quantum dot surfaces can diffuse in a solventand, as such, the properties of quantum dots may change over time ifstored in this way, whether the storage is at a manufacturing facilityor an end-user facility. Second, end-users may prefer not to handle thesolvents typically used for storage of quantum dots, such as toluene,due to the significant fire and health hazards and the general trendtoward reducing volatile organic compounds in industrial settings.Third, the presence of even trace amounts of a carrier solvent maynegatively impact the curing properties of a final quantum dotcomposite, for example, if the final matrix material is a polymer.Fourth, quantum dots stored in solvent may have a short shelf-life sincethe particles typically have a higher tendency to irreversiblyagglomerate and therefore change properties over time. It is to beappreciated that, conventionally, quantum dots are typically shipped insolution (e.g., as dissolved in an organic solvent or water) or as apowder.

To address the above issues, in accordance with one or more embodimentsof the present invention, alternative approaches for delivering stablequantum dot materials are described herein. Such approaches may enablefurther processing of the delivered quantum dot material into a finalmatrix material without difficulty and without changing the propertiesof the quantum dots themselves. In at least one such embodiment, quantumdot performance for quantum dots delivered by approaches describedherein was unchanged as compared to analogous quantum dots stored in asolvent.

In a first aspect, some embodiments involve delivery methods compatiblefor an end-use that ultimately involves mixing quantum dots into asilicone polymer. In one such embodiment, quantum dots are delivered asdispersed in a polymer bearing the same functional groups as standardlight emitting diode (LED) polymer encapsulants, enabling elimination ofthe use of an organic solvent as a dispersant while ensuringcompatibility between the carrier and LED polymers. In anotherembodiment, quantum dots are delivered in one part of a two-partsilicone formulation, again enabling elimination of the use of anorganic solvent as a dispersant. In an embodiment, in either case, apermanent or end-user composite having a dispersion of thenano-particles or quantum dots therein may be fabricated. In anotherembodiment, in either case, additives to benefit the performance ofquantum dots are be added to the quantum dot mixture for shipping, or atthe point of mixing/curing/formation of the final end-user composite.

In an exemplary embodiment, a vinyl-terminatedpoly(phenylmethylsiloxane) (the most preferred PMV-9925) is used as adispersion medium for delivering quantum dots to a final polymercomposite which would comprise a vinyl-terminatedpoly(phenylmethylsiloxane)-QD and methyl or phenyl-based siliconemixture. In a specific embodiment, solvent was removed from quantum dotsand the quantum dots (QD) were re-dispersed into PMV-9925. In a specificembodiment, a strong base (e.g., KOH) is added to the vinyl-terminatedpoly(phenylmethylsiloxane)-QD mix. The vinyl-terminatedpoly(phenylmethylsiloxane)-QD mix containing a strong base (e.g. KOH)were then added to a phenyl-based silicone (at a preferred weight ratioof 1:5 QD mixture:silicone) The resulting mixture was cured and thentested for performance (e.g., by measurement of photo-luminescentquantum yield, PLQY). The measurements were made at both roomtemperature and 100 degrees Celsius. The silicone/PMV samples wereprepared and tested from the same PMV/QD stock solution over the courseof 12 days, and no significant change in performance was observed.

FIG. 1A is a graph 100A showing one-way analysis of quantum dot samplesover the course of twelve days for quantum dots delivered as a PMV-9925solution, in accordance with an embodiment of the present invention.Referring to graph 100A, quantum dot samples were treated with base(KOH) in two manners: prior to dispersing in PMV-9925 and afterdispersing in PMV-9925 on the day of film casting. Samples dispersed inPMV-9925 and treated with base on the day of film casting show nosignificant change in performance at 100 degrees Celsius.

FIG. 1B is a graph 100B showing one-way analysis of quantum dot samplesdispersed in two different media: a solvent (toluene) and a polymer(PMV-9925), in accordance with an embodiment of the present invention.Referring to graph 100B, there is no significant different between thetwo media in relationship to their performance at 100 degrees Celsius.Thus, a performance comparison between quantum dots delivered in solvent(e.g., toluene in this case) and quantum dots delivered in PMV exhibitno statistical difference in PLQY.

In a second aspect, other embodiments involve drying the quantum dotsfor delivery. In an exemplary embodiment, a plurality of quantum dots isprepared as a powder by a freeze-drying process, also known aslyophilization, which involves removal of an organic solvent by applyingvacuum to a solid state dispersion of quantum dots. In one suchembodiment, the solid state dispersion is obtained by freezing to atemperature below the melting point of the solvent. In another exemplaryembodiment, a plurality of quantum dots is prepared as a powder byremoval of a solvent from a quantum dot dispersion using a rotaryevaporator or a distillation apparatus followed by complete removal ofany residual solvent retained in the solid mass of quantum dotparticles. In one such embodiment, the residual solvent is removed bypurging using an inert gas such as nitrogen (N₂) while the quantum dotparticles are exposed to temperatures approximately in the range of 60to 150 degrees Celsius. In an embodiment, whether dried bylyophilization or by purging with an inert gas, additives to benefit theperformance of the quantum dots can be added to the quantum dot mixturefor shipping, or at the point of mixing/curing/formation of the finalend-user composite (which may include a dispersion of the nano-particlesor quantum dots therein). It is to be appreciated that other dryingapproaches may also be used to prepare quantum dots for delivery.

In accordance with an exemplary embodiment, FIG. 2A is a plot 200A ofPLQY at 100 degrees Celsius versus room temperature showing luminescentnano-composite performance of films including quantum dots. Referring toplot 200A, films were prepared with light emitting diode (LED)-gradesilicones to which quantum dot (QD) particles were incorporated bymixing with a toluene dispersion of the QD, QDs dried with heat, and QDsdried at low temperatures. Samples prepared from particles in tolueneand particles which were dried in two different ways performedcomparably. Any difference in performance observed here may arise fromusing a base (e.g., KOH in this case) as an additive to boost thephotoluminescence quantum yield (PLQY), and not from the dryingprotocol. It is to be appreciated that based addition other than KOH maybe used to boost PLQY.

In accordance with another exemplary embodiment, FIG. 2B is a plot 200Bof PLQY at 100 degrees Celsius versus room temperature showingluminescent nano-composite performance of films including quantum dots.Referring to plot 200B, luminescent nano-composite performance isprovided for films prepared with LED grade silicones to which QDparticles (open dots) were incorporated by mixing with a toluenedispersion of the QDs or with freeze-dried QDs at differentconcentrations, along with a base. The solid dots represent performanceof nano-composites prepared with freeze-dried particles but to which KOHwas not added. A very similar trend is observed for films prepared withparticles from toluene dispersions. It is to be appreciated that basedaddition other than KOH may be used to boost PLQY.

In accordance with another exemplary embodiment, FIG. 3 is a plot 300 ofspectral radiant power (%) as a function of wavelength (nm) comparingperformance of freeze-dried quantum dot heterostructures (QDH) alongwith solution dispersion QDH in the fabrication of a warm white phosphorfilm. Referring to plot 300, the freeze-dried approach maintains thesame color quality and color rendering as compared to the solutiondispersion method. Plot 300 also reveals that the freeze-driednano-powder and the green phosphor powder do not aggregate together inthe matrix which would otherwise be detrimental to performance.

In accordance with another exemplary embodiment, FIG. 4 is a CIE 1931plot 400 of freeze-dried warm white film (square) compared to solutiondispersion warm white film (circle). Referring to plot 400, bothapproaches provide results that are within a 3-step MacAdam ellipse.

In another aspect, the above described delivery approaches can be usedto deliver nano-particles, such as hetero-structure-based quantum dots.Such hetero-structures may have specific geometries suitable forperformance optimization. In an example, several factors may beintertwined for establishing an optimized geometry for a quantum dothaving a nano-crystalline core and nano-crystalline shell pairing. As areference, FIG. 5 illustrates a schematic of a cross-sectional view of aquantum dot suitable for delivery by approaches described herein, inaccordance with an embodiment of the present invention. Referring toFIG. 5, a semiconductor structure (e.g., a quantum dot structure) 500includes a nano-crystalline core 502 surrounded by a nano-crystallineshell 504. The nano-crystalline core 502 has a length axis (aCORE), awidth axis (bCORE) and a depth axis (cCORE), the depth axis providedinto and out of the plane shown in FIG. 5. Likewise, thenano-crystalline shell 504 has a length axis (aSHELL), a width axis(bSHELL) and a depth axis (cSHELL), the depth axis provided into and outof the plane shown in FIG. 5. The nano-crystalline core 502 has a center503 and the nano-crystalline shell 504 has a center 505. Thenano-crystalline shell 504 surrounds the nano-crystalline core 502 inthe b-axis direction by an amount 506, as is also depicted in FIG. 5.

The following are attributes of a quantum dot that may be tuned foroptimization, with reference to the parameters provided in FIG. 5, inaccordance with embodiments of the present invention. Nano-crystallinecore 502 diameter (a, b or c) and aspect ratio (e.g., a/b) can becontrolled for rough tuning for emission wavelength (a higher value foreither providing increasingly red emission). A smaller overallnano-crystalline core provides a greater surface to volume ratio. Thewidth of the nano-crystalline shell along 506 may be tuned for yieldoptimization and quantum confinement providing approaches to controlred-shifting and mitigation of surface effects. However, strainconsiderations must be accounted for when optimizing the value ofthickness 506. The length (aSHELL) of the shell is tunable to providelonger radiative decay times as well as increased light absorption. Theoverall aspect ratio of the structure 500 (e.g., the greater ofaSHELL/bSHELL and aSHELL/cSHELL) may be tuned to directly impact PLQY.Meanwhile, overall surface/volume ratio for 500 may be kept relativelysmaller to provide lower surface defects, provide higherphotoluminescence, and limit self-absorption. Referring again to FIG. 5,the shell/core interface 508 may be tailored to avoid dislocations andstrain sites. In one such embodiment, a high quality interface isobtained by tailoring one or more of injection temperature and mixingparameters, the use of surfactants, and control of the reactivity ofprecursors.

In accordance with an embodiment of the present invention, a high PLQYquantum dot is based on a core/shell pairing using an anisotropic core.With reference again to FIG. 5, an anisotropic core is a core having oneof the axes aCORE, bCORE or cCORE different from one or both of theremaining axes. An aspect ratio of such an anisotropic core isdetermined by the longest of the axes aCORE, bCORE or cCORE divided bythe shortest of the axes aCORE, bCORE or cCORE to provide a numbergreater than 1 (an isotropic core has an aspect ratio of 1). It is to beunderstood that the outer surface of an anisotropic core may haverounded or curved edges (e.g., as in an ellipsoid) or may be faceted(e.g., as in a stretched or elongated tetragonal or hexagonal prism) toprovide an aspect ratio of greater than 1 (note that a sphere, atetragonal prism, and a hexagonal prism are all considered to have anaspect ratio of 1 in keeping with embodiments of the present invention).

A workable range of aspect ratio for an anisotropic nano-crystallinecore for a quantum dot may be selected for maximization of PLQY. Forexample, a core essentially isotropic may not provide advantages forincreasing PLQY, while a core with too great an aspect ratio (e.g., 2 orgreater) may present challenges synthetically and geometrically whenforming a surrounding shell. Furthermore, embedding the core in a shellcomposed of a material different than the core may also be used enhancePLQY of a resulting quantum dot.

Accordingly, in an embodiment, a semiconductor structure includes ananisotropic nano-crystalline core composed of a first semiconductormaterial and having an aspect ratio between, but not including, 1.0 and2.0. The semiconductor structure also includes a nano-crystalline shellcomposed of a second, different, semiconductor material at leastpartially surrounding the anisotropic nano-crystalline core. In one suchembodiment, the aspect ratio of the anisotropic nano-crystalline core isapproximately in the range of 1.01-1.2 and, in a particular embodiment,is approximately in the range of 1.1-1.2. In the case of rounded edges,then, the nano-crystalline core may be substantially, but not perfectly,spherical. However, the nano-crystalline core may instead be faceted. Inan embodiment, the anisotropic nano-crystalline core is disposed in anasymmetric orientation with respect to the nano-crystalline shell, asdescribed in greater detail in the example below.

Another consideration for maximization of PLQY in a quantum dotstructure is to provide an asymmetric orientation of the core within asurrounding shell. For example, referring again to FIG. 5, the center503 of the core 502 may be misaligned with (e.g., have a differentspatial point than) the center 505 of the shell 504. In an embodiment, asemiconductor structure includes an anisotropic nano-crystalline corecomposed of a first semiconductor material. The semiconductor structurealso includes a nano-crystalline shell composed of a second, different,semiconductor material at least partially surrounding the anisotropicnano-crystalline core. The anisotropic nano-crystalline core is disposedin an asymmetric orientation with respect to the nano-crystalline shell.In one such embodiment, the nano-crystalline shell has a long axis(e.g., aSHELL), and the anisotropic nano-crystalline core is disposedoff-center along the long axis. In another such embodiment, thenano-crystalline shell has a short axis (e.g., bSHELL), and theanisotropic nano-crystalline core is disposed off-center along the shortaxis. In yet another embodiment, however, the nano-crystalline shell hasa long axis (e.g., aSHELL) and a short axis (e.g., bSHELL), and theanisotropic nano-crystalline core is disposed off-center along both thelong and short axes.

With reference to the above described nano-crystalline core andnano-crystalline shell pairings, in an embodiment, the nano-crystallineshell completely surrounds the anisotropic nano-crystalline core. In analternative embodiment, however, the nano-crystalline shell onlypartially surrounds the anisotropic nano-crystalline core, exposing aportion of the anisotropic nano-crystalline core, e.g., as in a tetrapodgeometry or arrangement. In an embodiment, the nano-crystalline shell isan anisotropic nano-crystalline shell, such as a nano-rod, thatsurrounds the anisotropic nano-crystalline core at an interface betweenthe anisotropic nano-crystalline shell and the anisotropicnano-crystalline core. The anisotropic nano-crystalline shell passivatesor reduces trap states at the interface. The anisotropicnano-crystalline shell may also, or instead, deactivate trap states atthe interface.

With reference again to the above described nano-crystalline core andnano-crystalline shell pairings, in an embodiment, the first and secondsemiconductor materials (core and shell, respectively) are eachmaterials such as, but not limited to, Group II-VI materials, GroupIII-V materials, Group IV-VI materials, Group materials, or GroupII-IV-VI materials and, in one embodiment, are mono-crystalline. In onesuch embodiment, the first and second semiconductor materials are bothGroup II-VI materials, the first semiconductor material is cadmiumselenide (CdSe), and the second semiconductor material is one such as,but not limited to, cadmium sulfide (CdS), zinc sulfide (ZnS), or zincselenide (ZnSe). In an embodiment, the semiconductor structure furtherincludes a nano-crystalline outer shell at least partially surroundingthe nano-crystalline shell and, in one embodiment, the nano-crystallineouter shell completely surrounds the nano-crystalline shell. Thenano-crystalline outer shell is composed of a third semiconductormaterial different from the first and second semiconductor materials. Ina particular such embodiment, the first semiconductor material iscadmium selenide (CdSe), the second semiconductor material is cadmiumsulfide (CdS), and the third semiconductor material is zinc sulfide(ZnS).

With reference again to the above described nano-crystalline core andnano-crystalline shell pairings, in an embodiment, the semiconductorstructure (i.e., the core/shell pairing in total) has an aspect ratioapproximately in the range of 1.5-10 and, 3-6 in a particularembodiment. In an embodiment, the nano-crystalline shell has a long axisand a short axis. The long axis has a length approximately in the rangeof 5-40 nanometers. The short axis has a length approximately in therange of 1-5 nanometers greater than a diameter of the anisotropicnano-crystalline core parallel with the short axis of thenano-crystalline shell. In a specific such embodiment, the anisotropicnano-crystalline core has a diameter approximately in the range of 2-5nanometers. The thickness of the nano-crystalline shell on theanisotropic nano-crystalline core along a short axis of thenano-crystalline shell is approximately in the range of 1-5 nanometersof the second semiconductor material.

With reference again to the above described nano-crystalline core andnano-crystalline shell pairings, in an embodiment, the anisotropicnano-crystalline core and the nano-crystalline shell form a quantum dot.In one such embodiment, the quantum dot has a photoluminescence quantumyield (PLQY) of at least 90%. Emission from the quantum dot may bemostly, or entirely, from the nano-crystalline core. For example, in anembodiment, emission from the anisotropic nano-crystalline core is atleast approximately 75% of the total emission from the quantum dot. Anabsorption spectrum and an emission spectrum of the quantum dot may beessentially non-overlapping. For example, in an embodiment, anabsorbance ratio of the quantum dot based on absorbance at 400nanometers versus absorbance at an exciton peak for the quantum dot isapproximately in the range of 5-35.

In an embodiment, a quantum dot based on the above describednano-crystalline core and nano-crystalline shell pairings is adown-converting quantum dot. However, in an alternative embodiment, thequantum dot is an up-shifting quantum dot. In either case, a lightingapparatus may include a light emitting diode and a plurality of quantumdots such as those described above. The quantum dots may be appliedproximal to the LED and provide down-conversion or up-shifting of lightemitted from the LED. Thus, semiconductor structures according to thepresent invention may be advantageously used in solid state lighting.The visible spectrum includes light of different colors havingwavelengths between about 380 nm and about 780 nm that are visible tothe human eye. An LED will emit a UV or blue light which isdown-converted (or up-shifted) by semiconductor structures describedherein. Any suitable ratio of emission color from the semiconductorstructures may be used in devices of the present invention. LED devicesaccording to embodiments of the present invention may have incorporatedtherein sufficient quantity of semiconductor structures (e.g., quantumdots) described herein capable of down-converting any available bluelight to red, green, yellow, orange, blue, indigo, violet or othercolor. These structures may also be used to downconvert or upconvertlower energy light (green, yellow, etc) from LED devices, as long as theexcitation light produces emission from the structures.

The above described semiconductor structures, e.g., quantum dots,suitable for delivery by approaches described herein may be fabricatedto further include one or more compositional transition layers betweenportions of the structures, e.g., between core and shell portions.Inclusion of such a transition layer may reduce or eliminate anyperformance inefficiency associated with otherwise abrupt junctionsbetween the different portions of the structures. For example, theinclusion of a compositional transition layer may be used to suppressAuger recombination within a quantum dot structure. Auger recombinationevents translate to energy from one exciton being non-radiativelytransferred to another charge carrier. Such recombination in quantumdots typically occurs on sub-nanosecond time scales such that a veryshort multi-exciton lifetime indicates non-radiative recombination,while higher nanosecond bi-exciton lifetimes indicate radiativerecombination. A radiative bi-exciton has a lifetime approximately 2-4times shorter than radiative single exciton.

More specifically, as is described in greater detail below inassociation with FIGS. 6-8, an optimal particle (e.g., quantum dotstructure) may have one or more of a high aspect ratio, a large volumerelative to other quantum dot hetero-structures, and graded or alloyedtransitions between different semiconductor materials. The graded oralloyed transitions can be used to render a compositional and structuraltransition from one component (such as a quantum dot core) to anothercomponent (such as a quantum dot shell) a smooth function rather than astep function. In one embodiment, the terms “graded,” “gradient,” or“grading” are used to convey gradual transitioning from onesemiconductor to another. In one embodiment, the terms “alloy,”“alloyed,” or “alloying” are used to convey an entire volume having afixed intermediate composition. In more specific embodiments, core orseed volume is maximized relative to shell volume for a given emissioncolor. A graded or alloyed core/shell transition layer may be includedbetween the two volumes.

In a first example, FIG. 6 illustrates a cross-sectional view of asemiconductor structure having a nano-crystalline core andnano-crystalline shell pairing with one compositional transition layer,in accordance with an embodiment of the present invention.

Referring to FIG. 6, a semiconductor structure 600 includes anano-crystalline core 602 composed of a first semiconductor material. Anano-crystalline shell 604 composed of a second, different,semiconductor material at least partially surrounds the nano-crystallinecore 602. A compositional transition layer 610 is disposed between, andin contact with, the nano-crystalline core 602 and nano-crystallineshell 604. The compositional transition layer 610 has a compositionintermediate to the first and second semiconductor materials.

In an embodiment, the compositional transition layer 610 is an alloyedlayer composed of a mixture of the first and second semiconductormaterials. In another embodiment, the compositional transition layer 610is a graded layer composed of a compositional gradient of the firstsemiconductor material proximate to the nano-crystalline core 602through to the second semiconductor material proximate to thenano-crystalline shell 604. In either case, in a specific embodiment,the compositional transition layer 610 has a thickness approximately inthe range of 1.5-2 monolayers. Exemplary embodiments include a structure600 where the first semiconductor material is cadmium selenide (CdSe),the second semiconductor material is cadmium sulfide (CdS), and thecompositional transition layer 610 is composed of CdSe_(x)S_(y), where0<x<1 and 0<y<1, or where the first semiconductor material is cadmiumselenide (CdSe), the second semiconductor material is zinc selenide(ZnSe), and the compositional transition layer 610 is composed ofCd_(x)Zn_(y)Se, where 0<x<1 and 0<y<1.

In accordance with an embodiment of the present invention, thecompositional transition layer 610 passivates or reduces trap stateswhere the nano-crystalline shell 604 surrounds the nano-crystalline core602. Exemplary embodiments of core and/or shell parameters include astructure 600 where the nano-crystalline core 602 is an anisotropicnano-crystalline core having an aspect ratio between, but not including,1.0 and 2.0 (in a specific embodiment, approximately in the range of1.01-1.2), and the nano-crystalline shell is an anisotropicnano-crystalline shell having an aspect ratio approximately in the rangeof 4-6.

In an embodiment, the nano-crystalline shell 604 completely surroundsthe nano-crystalline core 602, as depicted in FIG. 6. In an alternativeembodiment, however, the nano-crystalline shell 604 only partiallysurrounds the nano-crystalline core 602, exposing a portion of thenano-crystalline core 602. Furthermore, in either case, thenano-crystalline core 602 may be disposed in an asymmetric orientationwith respect to the nano-crystalline shell 604. In one or moreembodiments, semiconductor structures such as 600 are fabricated tofurther include a nano-crystalline outer shell 606 at least partiallysurrounding the nano-crystalline shell 604. The nano-crystalline outershell 606 may be composed of a third semiconductor material differentfrom the first and second semiconductor materials, i.e., different fromthe materials of the core 602 and shell 604. The nano-crystalline outershell 606 may completely surround the nano-crystalline shell 604 or mayonly partially surround the nano-crystalline shell 604, exposing aportion of the nano-crystalline shell 604.

For embodiments including a nano-crystalline outer shell, an additionalcompositional transition layer may be included. Thus, in a secondexample, FIG. 7 illustrates a cross-sectional view of a semiconductorstructure having a nano-crystalline core/nano-crystallineshell/nano-crystalline outer shell combination with two compositionaltransition layers, in accordance with an embodiment of the presentinvention.

Referring to FIG. 7, a semiconductor structure 700 includes thenano-crystalline core 602, nano-crystalline shell 604, nano-crystallineouter shell 606 and compositional transition layer 610 of structure 600.However, in addition, semiconductor structure 700 includes a secondcompositional transition layer 712 disposed between, and in contactwith, the nano-crystalline shell 604 and the nano-crystalline outershell 606. The second compositional transition layer 712 has acomposition intermediate to the second and third semiconductormaterials, i.e., intermediate to the semiconductor materials of theshell 604 and outer shell 606.

In an embodiment, the second compositional transition layer 712 is analloyed layer composed of a mixture of the second and thirdsemiconductor materials. In another embodiment, the second compositionaltransition layer 712 is a graded layer composed of a compositionalgradient of the second semiconductor material proximate to thenano-crystalline shell 604 through to the third semiconductor materialproximate to the nano-crystalline outer shell 606. In either case, in aspecific embodiment, the second compositional transition layer 712 has athickness approximately in the range of 1.5-2 monolayers. Exemplaryembodiments include a structure 700 where the first semiconductormaterial is cadmium selenide (CdSe), the second semiconductor materialis cadmium sulfide (CdS), the third semiconductor material is zincsulfide (ZnS), and the second compositional transition layer 1412 iscomposed of Cd_(x)Zn_(y)S, where 0<x<1 and 0<y<1, or the firstsemiconductor material is cadmium selenide (CdSe), the secondsemiconductor material is zinc selenide (ZnSe), the third semiconductormaterial is zinc sulfide (ZnS), and the second compositional transitionlayer 1412 is composed of ZnSe_(x)S_(y), where 0<x<1 and 0<y<1. Inaccordance with an embodiment of the present invention, the secondcompositional transition layer 712 passivates or reduces trap stateswhere the nano-crystalline outer shell 606 surrounds thenano-crystalline shell 604.

For other embodiments including a nano-crystalline outer shell, an outercompositional transition layer may be included without including aninner compositional transition layer. Thus, in a third example, FIG. 8illustrates a cross-sectional view of a semiconductor structure having anano-crystalline core/nano-crystalline shell/nano-crystalline outershell combination with one compositional transition layer, in accordancewith an embodiment of the present invention.

Referring to FIG. 8, a semiconductor structure 800 includes thenano-crystalline core 602, nano-crystalline shell 604, andnano-crystalline outer shell 606 of structure 600. In addition, thesemiconductor structure 800 includes the compositional transition layer712 of structure 700 disposed between, and in contact with, thenano-crystalline shell 604 and the nano-crystalline outer shell 606.However, structure 800 does not include the compositional transitionlayer 610 of structure 600, i.e., there is no compositional transitionlayer between the core 602 and shell 604.

Referring to FIGS. 5-8, and as depicted in FIGS. 6-8, the structures500, 600, 700 and 800 may further include an insulator coating (e.g.,shown as 608 in FIGS. 6-8) surrounding and encapsulating thenano-crystalline core/nano-crystalline shell pairing or nano-crystallinecore/nano-crystalline shell/nano-crystalline outer shell combination. Inone such embodiment, the insulator coating is composed of an amorphousmaterial such as, but not limited to, silica (SiO_(x)), titanium oxide(TiO_(x)), zirconium oxide (ZrO_(x)), alumina (AlO_(x)), or hafnia(HfO_(x)). In an embodiment, insulator-coated structures based onstructures 500, 600, 700 and 800 are quantum dot structures. Forexample, structures 500, 600, 700 and 800 may be used as adown-converting quantum dot or an up-shifting quantum dot.

The above described insulator coating may be formed to encapsulate aquantum dot using a reverse micelle process. For example, FIG. 9illustrates operations in a reverse micelle approach to coating asemiconductor structure, in accordance with an embodiment of the presentinvention. Referring to part A of FIG. 9, a quantum dot hetero-structure(QDH) 902 (e.g., a nano-crystalline core/shell pairing) has attachedthereto a plurality of TOPO ligands 904 and TOP ligands 906. Referringto part B, the plurality of TOPO ligands 904 and TOP ligands 906 areexchanged with a plurality of Si(OCH₃)₃(CH₂)₃NH₂ ligands 908. Thestructure of part B is then reacted with TEOS (Si(OEt)₄) and ammoniumhydroxide (NH₄OH) to form a silica coating 910 surrounding the QDH 902,as depicted in part C of FIG. 9.

In another aspect, nano-particles or quantum dots are delivered byapproaches described herein for ultimate use in application for alighting device, e.g., to provide a layer having a dispersion ofsemiconductor structures therein for inclusion in the lighting device.In one embodiment, the dispersion of semiconductor structures is adispersion of quantum dots such as those described above in associationwith FIGS. 5-9.

As an example, FIG. 10 illustrates a lighting device 1000. Device 1000has a blue LED 1002 with a layer 1004 having a dispersion of quantumdots 1006 therein, in accordance with an embodiment of the presentinvention. Devices 1000 may be used to produce “cold” or “warm” whitelight. In one embodiment, the device 1000 has little to no wasted energysince there is little to no emission in the IR regime. In a specificsuch embodiment, the use of a layer having a composition with adispersion of anisotropic quantum dots therein enables greater thanapproximately 40% lm/W gains versus the use of conventional phosphors.Increased efficacy may thus be achieved, meaning increased luminousefficacy based on lumens (perceived light brightness) per wattelectrical power. Accordingly, down converter efficiency and spectraloverlap may be improved with the use of a dispersion of quantum dots toachieve efficiency gains in lighting and display. In an additionalembodiment, a conventional phosphor is also included in the composition,along with the dispersion of quantum dots 1006.

Different approaches may be used to provide a quantum dot layer in alighting device. In an example, FIG. 11 illustrates a cross-sectionalview of a lighting device 1100 with a layer having a composition with adispersion of quantum dots therein, in accordance with an embodiment ofthe present invention. Referring to FIG. 11, a blue LED structure 1102includes a die 1104, such as an InGaN die, and electrodes 1106. The blueLED structure 1102 is disposed on a coating or supporting surface 1108and housed within a protective and/or reflective structure 1110. A layer1112 is formed over the blue LED structure 1102 and within theprotective and/or reflective structure 1110. The layer 1112 has acomposition including a dispersion of quantum dots or a combination of adispersion of quantum dots and conventional phosphors. Although notdepicted, the protective and/or reflective structure 1110 can beextended upwards, well above the matrix layer 1112, to provide a “cup”configuration.

In another example, FIG. 12 illustrates a cross-sectional view of alighting device 1200 with a layer having a composition with a dispersionof quantum dots therein, in accordance with another embodiment of thepresent invention. Referring to FIG. 12, the lighting device 1200includes a blue LED structure 1202. A quantum dot down converter screen1204 is positioned somewhat remotely from the blue LED structure 1202.The quantum dot down converter screen 1204 includes a layer with acomposition having a dispersion of quantum dots therein, e.g., ofvarying color, or a combination of a dispersion of quantum dots andconventional phosphors. In one embodiment, the device 1200 can be usedto generate white light, as depicted in FIG. 12.

In another example, FIG. 13 illustrates a cross-sectional view of alighting device 1300 with a layer having a composition with a dispersionof quantum dots therein, in accordance with another embodiment of thepresent invention. Referring to FIG. 13, the lighting device 1300includes a blue LED structure 1302 supported on a substrate 1304 whichmay house a portion of the electrical components of the blue LEDstructure 1302. A first conversion layer 1306 has a composition thatincludes a dispersion of red-light emitting anisotropic quantum dotstherein. A second conversion layer 1308 has a second composition thatincludes a dispersion of quantum dots or green or yellow phosphors or acombination thereof (e.g., yttrium aluminum garnet, YAG phosphors)therein. Optionally, a sealing layer 1310 may be formed over the secondconversion layer 1308, as depicted in FIG. 13. In one embodiment, thedevice 1300 can be used to generate white light.

In another example, FIG. 14 illustrates a cross-sectional view of alighting device 1400 with a layer having a composition with a dispersionof quantum dots therein, in accordance with another embodiment of thepresent invention. Referring to FIG. 14, the lighting device 1400includes a blue LED structure 1402 supported on a substrate 1404 whichmay house a portion of the electrical components of the blue LEDstructure 1402. A single conversion layer 1406 has a composition thatincludes a dispersion of red-light emitting anisotropic quantum dots incombination with a dispersion of green quantum dots or green and/oryellow phosphors therein. Optionally, a sealing layer 1410 may be formedover the single conversion layer 1406, as depicted in FIG. 14. In oneembodiment, the device 1400 can be used to generate white light.

In additional examples, FIGS. 15A-15C illustrate cross-sectional viewsof various configurations for lighting devices 1500A-1500C with a layerhaving a composition with a dispersion of quantum dots therein,respectively, in accordance with another embodiment of the presentinvention. Referring to FIGS. 15A-15C, the lighting devices 1500A-1500Ceach include a blue LED structure 1502 supported on a substrate 1504which may house a portion of the electrical components of the blue LEDstructure 1502. A conversion layer 1506A-1506C, respectively, has acomposition that includes a dispersion of one or more light-emittingcolor types of quantum dots therein. Referring to FIG. 1500Aspecifically, the conversion layer 1506A is disposed as a thin layeronly on the top surface of the blue LED structure 1502. Referring toFIG. 1500B specifically, the conversion layer 1506B is disposed as athin layer conformal with all exposed surfaces of the blue LED structure1502. Referring to FIG. 1500C specifically, the conversion layer 1506Cis disposed as a “bulb” only on the top surface of the blue LEDstructure 1502. In the above examples (e.g., FIGS. 10-14 and 15A-15C),although use with a blue LED is emphasized, it is to be understood thata layer having a composition with a dispersion of quantum dots thereincan be used with other light sources as well, including LEDs other thanblue LEDs.

Thus, quantum dot delivery methods have been disclosed.

What is claimed is:
 1. A composition for delivery or storage of quantumdots, comprising: a vinyl-containing poly(phenylmethylsiloxane) polymer;a plurality of quantum dots dispersed in the vinyl-containingpoly(phenylmethylsiloxane) polymer; and a photo-luminescent quantumyield (PLQY) boosting agent comprising a base of potassium hydroxide(KOH).
 2. The composition of claim 1, wherein the quantum dots aredown-converting.
 3. The composition of claim 1, wherein each of thequantum dots have a nano-crystalline core and nanocrystalline shellpairing.
 4. The composition of claim 3, wherein the nano-crystallinecore is an anisotropic nanocrystalline core composed of a firstsemiconductor material, and wherein the nanocrystalline shell iscomposed of a second, different, semiconductor material.
 5. Thecomposition of claim 3, wherein the nano-crystalline core is composed ofa first semiconductor material, the nanocrystalline shell is composed ofa second semiconductor material, and the first semiconductor materialand the second semiconductor material are Group II-VI materials.
 6. Thecomposition of claim 3, wherein the nano-crystalline core is composed ofa first semiconductor material, the nanocrystalline shell is composed ofa second semiconductor material, and further comprising ananocrystalline outer shell that completely surrounds thenanocrystalline shell, wherein the nanocrystalline outer shell iscomposed of a third semiconductor material different from the firstsemiconductor material and the second semiconductor material.
 7. Thecomposition of claim 3, wherein the nano-crystalline core is composed ofa first semiconductor material, the nanocrystalline shell is composed ofa second semiconductor material, and further comprising a compositiontransition layer disposed between and in contact with thenanocrystalline core and the nanocrystalline shell, wherein thecomposition transition layer has a composition intermediate to the firstsemiconductor material and the second semiconductor material.
 8. Alighting device comprising a blue Light-Emitting Diode (LED) and a layerof a composition according to claim
 1. 9. The lighting device accordingto claim 8, wherein the layer further comprises conventional phosphors.